型号 SI3529DV-T1-E3
厂商 Vishay Siliconix
描述 MOSFET N/P-CH 40V 6-TSOP
SI3529DV-T1-E3 PDF
代理商 SI3529DV-T1-E3
标准包装 3,000
系列 TrenchFET®
FET 型 N 和 P 沟道
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 40V
电流 - 连续漏极(Id) @ 25° C 2.5A,1.95A
开态Rds(最大)@ Id, Vgs @ 25° C 125 毫欧 @ 2.2A,10V
Id 时的 Vgs(th)(最大) 3V @ 250µA
闸电荷(Qg) @ Vgs 7nC @ 10V
输入电容 (Ciss) @ Vds 205pF @ 20V
功率 - 最大 1.4W
安装类型 表面贴装
封装/外壳 6-TSOP(0.065",1.65mm 宽)
供应商设备封装 6-TSOP
包装 带卷 (TR)
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